Effect of Phonon Dispersion on Thermal Conduction Across Si/Ge Interfaces

نویسندگان

  • Dhruv Singh
  • Jayathi Murthy
  • Tim Fisher
  • Jayathi Y. Murthy
  • Timothy S. Fisher
چکیده

We report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization is implemented over a wide range of Knudsen numbers. The results indicate that the thermal conductivity of a Si/Ge superlattice is much lower than that of the constitutive bulk materials for superlattice periods in the submicron regime. We report results for effective thermal conductivity of various material volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce significantly more thermal resistance than that due to boundary scattering of phonons. [DOI: 10.1115/1.4004429]

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. We provide a derivation allowing the calculation of thermal conductance at interfaces by equilibrium molecular dyna...

متن کامل

Thermal Resistance of Silicon/germanium Interfaces from Lattice Dynamics Calculations

INTRODUCTION Phonon scattering at the interface between two materials results in a thermal resistance, R [1]. An ability to accurately predict the thermal resistance of semiconductor interfaces is important in devices where phonon interface scattering is a significant contributor to the overall thermal resistance (e.g., computer chips with high component density). This ability will also lead to...

متن کامل

Effect of interfacial species mixing on phonon transport in semiconductor superlattices

Molecular dynamics simulations are used to examine the effect of interfacial species mixing on the thermal conductivity of Stillinger-Weber Si /Si0.7Ge0.3 and Si/Ge superlattices at a temperature of 500 K. The thermal conductivity of Si /Si0.7Ge0.3 superlattices is predicted to not depend on the interfacial species mixing and to increase with increasing period length. This period length depende...

متن کامل

Crystalline-Amorphous Interface: Molecular Dynamics Simulation of Thermal Conductivity

Effect of a crystalline-amorphous interface on heat conduction has been studied using atomistic simulations of a silicon system. System with amorphous silicon was created using the bond-switching Monte Carlo simulation method and heat conduction near room temperature was studied by molecular dynamics simulations of this system. INTRODUCTION As the sizes of electronic devices decrease an increas...

متن کامل

Lattice-dynamical calculation of phonon scattering at ideal Si–Ge interfaces

Detailed phonon scattering at an ideal Si–Ge interface is studied with a linear lattice dynamics model. Frequency dependent transmission coefficients indicate the significance of acoustic-optical phonon mode conversion at the interface. Applied to multiple interfaces, the method shows how the overall thermal resistance approaches a finite (Bloch mode) limit with the increasing number of interfa...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011